STB16NM50N datasheet(5/18 Pages) STMICROELECTRONICS

No de pièce	STB16NM50N

Description	N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N

Electrical characteristics

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Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 250 V, ID = 7.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

20

15

60

16

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ

Max

Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)

15

60

A

VSD

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 15 A, VGS=0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =15 A, di/dt =100 A/µs,

VDD = 100 V

(see Figure 23)

400

5

24

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VDD = 100 V

di/dt =100 A/µs, ISD = 15 A

Tj = 150 °C (see Figure 23)

500

6

24

ns

µC

A

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Fabricant	No de pièce	Fiches technique	Description
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