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IRFP4368PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFP4368PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page 06/02/08 Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET S D G PD - 97322 GD S Gate Drain Source TO-247AC S D G D VDSS 75V RDS(on) typ. 1.46m Ω max. 1.85m Ω ID (Silicon Limited) 350A c ID (Package Limited) 195A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.29 RθCS Case-to-Sink, Flat Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient jk ––– 40 430 See Fig. 14, 15, 22a, 22b 520 13 -55 to + 175 ± 20 3.4 10lb xin (1.1Nxm) 300 Max. 350 c 250 c 1280 195 |
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