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STB21NM50N-1 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STB21NM50N-1
Description  N-channel 500V - 0.15廓 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB21NM50N-1 Fiches technique(HTML) 3 Page - STMicroelectronics

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STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Electrical ratings
3/18
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/ D2PAK/
I2PAK/TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25°C
18
18(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
11
11(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
72
72(1)
A
PTOT
Total dissipation at TC = 25°C
140
30
W
Derating factor
1.12
0.23
W/°C
dv/dt(3)
3.
ISD ≤18 A, di/dt ≤400 A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Viso
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tstg
Storage temperature
–55 to 150
150
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
TO-220/D²PAK/
I²PAK / TO-247
TO-220FP
Unit
Rthj-case Thermal resistance junction-case max
0.89
4.21
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
9A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
480
mJ


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