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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRL3103D2PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRL3103D2PBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 7 page  IRL3103D2PbF PD-95435 06/22/04 Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The TO-220 package is universally preferred for all commercial-industrialapplicationsatpowerdissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Copackaged HEXFET® Power MOSFET and Schottky Diode l Generation 5 Technology l Logic Level Gate Drive l Minimize Circuit Inductance l Ideal For Synchronous Regulator Application l Lead-Free Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 54 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A IDM Pulsed Drain Current 220 PD @TA = 25°C Power Dissipation 2.0 W PD @TC = 25°C Power Dissipation 70 W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 16 V TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew10 lbfin (1.1Nm) °C Absolute Maximum Ratings VDSS = 30V RDS(on) = 0.014Ω ID = 54A FETKYTM MOSFET & SCHOTTKY RECTIFIER Parameter Typ. Max. Units RθJC Junction-to-Case 1.8 RθJA Junction-to-Ambient 62 °C/W Thermal Resistance G D S TO-220AB |
Numéro de pièce similaire - IRL3103D2PBF |
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Description similaire - IRL3103D2PBF |
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