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STP21NM60ND Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STP21NM60ND
Description  N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP21NM60ND Fiches technique(HTML) 5 Page - STMicroelectronics

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STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND
Electrical characteristics
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Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
17
68
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 17 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 20)
150
0.90
13
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 20)
210
1.6
15
ns
µC
A


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