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KM416S1120DT-GF6 Fiches technique(PDF) 2 Page - Samsung semiconductor

No de pièce KM416S1120DT-GF6
Description  512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Download  43 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416S1120DT-GF6 Fiches technique(HTML) 2 Page - Samsung semiconductor

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KM416S1120D
CMOS SDRAM
- 2 -
Rev. 1.4 (Jun. 1999)
Revision History
Revision 1.4 (June, 10th 1999)
• AC values of tRCD/tRP/tRAS/tRC are returned to the number of clock cycles. Those can be also converted to ns-unit
based values by multiplying the number of clock cycles and clock cycle time of each part together. Accordingly,
- Changed tRCD and tRP of KM416S1120D-7/8 each from 18ns to 21ns/20ns
- Changed tRC of KM416S1120D-7/8 each from 67ns/68ns to 70ns
- Changed tRC of KM416S1120D-6 from 66ns(11CLK) to 60ns (10CLK)
• Add KM416S1120D-C(183MHz@CL3) part .For -C part, tRDL=2CLK can be supported which is distingusihed by bucket
code "J"
Revision 1.3 (April 1999)
• Modified power-up sequence.
• Changed ILI from +/- 1uA to +/-10uA.
• Changed tSAC and tSHZ of KM416S1120DT-G/F8@CL2 and KM416S1120DT-G/F10@CL3 from 7ns to 6ns.
Revision 1.2 (March 1999)
• Removed KM416S1120D-Z (125MHz @ CL2) part.
• Supported tRDL=2CLK for -6 part which is distinguished by bucket code "J" .
Revision 1.1 (February 1999)
• Changed VDD Condition of KM416S1120D-7/8@CL2 from 3.135V~3.6V to 3.0V~3.6V.
• Changed AC characteristics table format.
Revision 1.0 (February 1999) - Final
• Changed tRDL of KM416S1120D-6 @ CL3 from 2CLK to 1CLK
• Changed tRAS and tRC of KM416S1120D-7 @ CL2 from 6CLK and 8CLK to 5CLK and 7CLK each.
• Changed tSAC and tSHZ of KM416S1120D-7 @ CL3 from 6ns to 5.5ns
• Changed tOH of KM416S1120D-8/10 from 3ns to 2.5ns
• Add KM416S1120D-Z (125MHz @ CL2)
• Changed ICC1 of KM416S1120D-7 @ CL2 from 120mA to 110mA
Revision 0.0 (November 1998) - Preliminary
• Initial draft


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