STB30NM60ND datasheet(3/15 Pages) STMICROELECTRONICS

No de pièce	STB30NM60ND

Description	N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND

Electrical ratings

3/15

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D2PAK

I2PAK / TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

V

VGS

Gate- source voltage

±30

V

ID

Drain current (continuous) at TC = 25°C

25

25(1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100°C

15.75

15.75(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

100

100(1)

A

PTOT

Total dissipation at TC = 25°C

190

40

W

Derating factor

1.51

0.24

W/°C

dv/dt(3)

3.

ISD ≤ 25A, di/dt ≤ 600A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

40

V/ns

Viso

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1s;TC=25°C)

--

2500

V

Tstg

Storage temperature

–55 to 150

150

°C

TJ

Max. operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

TO-220

D²PAK/I²PAK

TO-247 TO-220FP

Unit

Rthj-case Thermal resistance junction-case max

0.66

3.1

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

50

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

TBD

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

TBD

mJ

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Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STB30NM60ND	798Kb / 18P	N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

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Description similaire - STB30NM60ND

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STX30NM60ND	798Kb / 18P	N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
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