MIL-PRF-19500/376E

10

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of

screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) shall be

in accordance with group A, subgroup 2 herein. Delta requirements shall be in accordance with table III herein.

See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta

requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with

group A, subgroup 2 herein. Delta requirements shall be after each step and shall be in accordance with table III

herein.

4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup Method

Condition

B4

1037

B5

1027

°C minimum. Optionally, the test may be conducted for

°C minimum, sample size (for

option) n = 45, c = 0. In this case, the ambient temperature shall be adjusted such that a

(Note: If a failure occurs, resubmission shall be at the test conditions of the original

sample.)

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly

lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed

assembly lot shall be scrapped.

Step

Method

Condition

1

1039

°C min.,

°C minimum is allowed

provided that a minimum of 75% of rated power is dissipated. No heat sink or forced-air

cooling on the devices shall be permitted. n = 45 devices, c = 0

2

1039

The steady state life test of step 1 shall be extended to 1,000 hours for each die design.

Samples shall be selected from a wafer lot every twelve months of wafer production.

Group B, step 2 shall not be required more than once for any single wafer lot. n = 45,

c = 0.

3

1032

°C. n = 22, c = 0.