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STP12NM50FP Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STP12NM50FP
Description  N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP12NM50FP Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 50µA
34
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 6A
0.30
0.35
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 6A
5.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
1000
250
20
pF
pF
pF
Coss eq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
90
pF
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 6A,
RG = 4.7Ω, VGS = 10V
(see Figure 14)
20
10
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400V, ID = 12A
VGS =10V
(see Figure 15)
28
8
18
39
nC
nC
nC
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
1.6


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