STD8NM60N-1 datasheet(4/17 Pages) STMICROELECTRONICS

No de pièce	STD8NM60N-1

Description	N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

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Electrical characteristics

STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N

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2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

600

V

dv/dt(1)

1.

Characteristics value at turn off on inductive load

Drain-source voltage slope

VDD = 480 V, ID = 7 A,

VGS =10 V

38

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125 °C

1

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

23

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 3.5 A

0.56

0.65

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID= 3.5 A

15

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

560

37

2

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

153

pF

RG

Gate input resistance

f = 1 MHz Gate DC Bias = 0

Test Signal Level = 20 mV

Open Drain

6

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 7 A

VGS = 10 V

(see Figure 19)

19

3

10

nC

Numéro de pièce similaire - STD8NM60N-1

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STD8NM60N-1	706Kb / 19P	N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

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Description similaire - STD8NM60N-1

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STX8NM60N	706Kb / 19P	N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
	STD11NM60N-1	623Kb / 21P	N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET
	STD10NM65N	504Kb / 17P	N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET
	STF7NM60N	885Kb / 17P	N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
	STD9NM50N	491Kb / 17P	N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
	STD6NM60N	619Kb / 17P	N-channel 600V - 0.85廓 - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
	STD7NM50N	421Kb / 17P	N-channel 500V - 0.70廓 - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
	STD11NM60N	470Kb / 17P	N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET
	STD7NM80	977Kb / 17P	N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET
	STF20NM65N	864Kb / 16P	N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET May 2011 Rev 2

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STD8NM60N-1 Fiches technique(PDF) 4 Page - STMicroelectronics

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