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SPB20N60S5 Datasheet(Fiches technique) 1 Page - Infineon Technologies AG

Numéro de pièce SPB20N60S5
Description  Cool MOS™ Power Transistor
Télécharger  9 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
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 1 page
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1
2001-07-25
SPP20N60S5
SPB20N60S5
Preliminary data
Cool MOS™
====Power Transistor
•=New revolutionary high voltage technology
• Worldwide best R
DS(on) in TO 220
• Ultra low gate charge
•=Improved periodic avalanche rating
• Extreme dv/dt rated
•=Optimized capacitances
•=Improved noise immunity
•=Former development designation:
SPPx1N60S5/SPBx1N60S5
C
Power Semiconductors
O
O LMOS
Product Summary
VDS @ Tjmax
650
V
RDS(on)
0.19
ID
20
A
P-TO263-3-2
P-TO220-3-1
G,1
D,2
S,3
Marking
20N60S5
20N60S5
Type
Package
Ordering Code
SPP20N60S5
P-TO220-3-1
Q67040-S4751
SPB20N60S5
P-TO263-3-2
Q67040-S4171
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TC=25°C
TC=100°C
ID
20
13
A
Pulsed drain current 1)
TC=25°C
ID puls
40
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V
EAS
690
mJ
Avalanche energy (repetitive, limited by Tjmax)
ID = 20 A, VDD = 50 V
EAR
1
Avalanche current (repetitive, limited by Tjmax)
IAR
20
A
Reverse diode dv/dt
IS=20A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC=25°C
Ptot
208
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C




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