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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF3805L-7PPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF3805L-7PPBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRF3805S/L-7PPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L=0.043mH, RG = 25Ω, IAS = 140A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ of approximately 90°C. Solder mounted on IMS substrate. S D G S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage55 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C RDS(on) SMD Static Drain-to-Source On-Resistance ––– 2.0 2.6 m Ω VGS(th) Gate Threshold Voltage2.0 ––– 4.0 V gfs Forward Transconductance 110 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 130 200 nC Qgs Gate-to-Source Charge ––– 53 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 49 ––– td(on) Turn-On Delay Time –––23––– ns tr Rise Time ––– 130 ––– td(off) Turn-Off Delay Time –––80––– tf Fall Time –––52––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 7820 ––– pF Coss Output Capacitance ––– 1260 ––– Crss Reverse Transfer Capacitance ––– 610 ––– Coss Output Capacitance ––– 4310 ––– Coss Output Capacitance ––– 980 ––– Coss eff. Effective Output Capacitance ––– 1540 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 240 (Body Diode) A ISM Pulsed Source Current ––– ––– 1000 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 4568ns Qrr Reverse Recovery Charge ––– 35 53 nC VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 140A e TJ = 25°C, IF = 140A, VDD = 28V di/dt = 100A/µs e TJ = 25°C, IS = 140A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 10V d MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 44V, ƒ = 1.0MHz Conditions VGS = 0V, VDS = 0V to 44V ƒ = 1.0MHz, See Fig. 5 RG = 2.4Ω ID = 140A VDS = 25V, ID = 140A VDD = 28V ID = 140A VGS = 20V VGS = -20V VDS = 44V VGS = 10V e |
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