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SI7366DP Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI7366DP Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 72296 S-80440-Rev. C, 03-Mar-08 Vishay Siliconix Si7366DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power 0 120 200 40 80 Time (s) 160 110 0.1 0.01 0.001 Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 0.1 Limited by RDS(on)* TC = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s 1 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 10- 3 10- 2 1 10 600 10- 1 10- 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 53°C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Numéro de pièce similaire - SI7366DP_05 |
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Description similaire - SI7366DP_05 |
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