 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
SI4559ADY Fiches technique(PDF) 2 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
SI4559ADY Fiches technique(HTML) 2 Page - Vishay Siliconix |
|
|
2 / 12 page  Si4559ADY Vishay Siliconix New Product www.vishay.com 2 Document Number: 73624 S–52667—Rev. A, 02-Jan-06 SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain Source Breakdown Voltage VDS VGS = 0 V, ID = 250 mA N-Ch 60 V Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = –250 mA P-Ch –60 V VDS Temperature Coefficient DVDS/TJ ID = 250 mA N-Ch 55 VDS Temperature Coefficient DVDS/TJ ID = –250 mA P-Ch –50 mV VGS( h) Temperature Coefficient DVGS( h)/TJ ID = 250 mA N-Ch –6 mV VGS(th) Temperature Coefficient DVGS(th)/TJ IID = –250 mA P-Ch 4 Gate Threshold Voltage VGS( h) VDS = VGS, ID = 250 mA N-Ch 1 3 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA NCh P-Ch –1 –3 V Gate Body Leakage IGSS VDS =0V VGS = "20 V N-Ch 100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V NCh P-Ch –100 nA VDS = 60 V, VGS = 0 V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V NCh P-Ch –1 mA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 55 _C N-Ch 10 mA VDS = –60 V, VGS = 0 V, TJ = 55 _C NCh P-Ch –10 On State Drain Currentb ID( ) VDS w 5 V, VGS = 10 V N-Ch 20 A On-State Drain Currentb ID(on) VDS p –5 V, VGS = –10 V NCh P-Ch –25 A VGS = 10 V, ID = 4.3 A N-Ch 0.046 0.058 Drain Source On State Resistanceb rDS( ) VGS = –10 V, ID = –3.1 A NCh P-Ch 0.1 0.120 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 3.9 A N-Ch 0.059 0.072 W VGS = –4.5 V, ID = –0.2 A NCh P-Ch 0.126 0.150 Forward Transconductanceb gf VDS = 15 V, ID = 4.3 A N-Ch 15 S Forward Transconductanceb gfs VDS = –15 V, ID = –3.1 A NCh P-Ch 8.5 S Dynamica Input Capacitance Ci N-Ch 665 Input Capacitance Ciss N-Channel P-CH 650 Output Capacitance C N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz N-Ch 75 pF Output Capacitance Coss P-Channel NCh P-Ch 95 pF Reverse Transfer Capacitance C P Channel VDS = – 15 V, VGS = 0 V, f = 1 MHz N-Ch 40 Reverse Transfer Capacitance Crss NCh P-Ch 60 VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch 13 20 Total Gate Charge Q VDS = –30 V, VGS = –10 V, ID = –3.1 A P-Ch 14.5 22 Total Gate Charge Qg N-Ch 6 9 N-Channel NCh P-Ch 8 12 nC Gate Source Charge Q N-Channel VDS = 30 V, VGS = 4.5 V, ID = 4.3 A N-Ch 2.3 nC Gate-Source Charge Qgs P-Channel NCh P-Ch 2.2 Gate Drain Charge Q d P Channel VDS = – 30 V, VGS = –4.5 V, ID = –3.1 A N-Ch 2.6 Gate-Drain Charge Qgd NCh P-Ch 3.7 Gate Resistance R f=1MHz N-Ch 2 3 W Gate Resistance Rg f = 1 MHz NCh P-Ch 14 20 W |
Numéro de pièce similaire - SI4559ADY |
|
Description similaire - SI4559ADY |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
