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J108 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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J108 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 6 page J/SST108 Series Vishay Siliconix www.vishay.com 7-2 Document Number: 70231 S-04028—Rev. E, 04-Jun-01 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage –25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current 50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (1/16” from case for 10 sec.) 300 _C . . . . . . . . . . . . . . . . . . . Storage Temperature –55 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature –55 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipationa 350 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes a. Derate 2.8 mW/ _C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST108 J/SST109 J/SST110 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –32 –25 –25 –25 V Gate-Source Cutoff Voltage VGS(off) VDS = 5 V, ID = 1 mA –3 –10 –2 –6 –0.5 –4 V Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 80 40 10 mA VGS = –15 V, VDS = 0 V –0.01 –3 –3 –3 Gate Reverse Current IGSS TA = 125_C –5 Gate Operating Current IG VDG = 10 V, ID = 10 mA –0.01 nA VDS = 5 V, VGS = –10 V 0.02 3 3 3 Drain Cutoff Current ID(off) TA = 125_C 1.0 Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS v 0.1 V 8 12 18 W Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Dynamic Common-Source Forward Transconductance gfs 17 Common-Source Output Conductance gos VDS = 5 V, ID = 10 mA, f = 1 kHz 0.6 mS Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 8 12 18 W Common-Source VDS = 0 V SST 60 Common-Source Input Capacitance Ciss VGS = 0 V f = 1 MHz J Series 60 85 85 85 Common-Source Reverse VDS = 0 V SST 11 pF Common-Source Reverse Transfer Capacitance Crss VGS = –10 V f = 1 MHz J Series 11 15 15 15 Equivalent Input Noise Voltage en VDG = 5 V, ID = 10 mA f = 1 kHz 3.5 nV ⁄ √Hz Switching td(on) 3 Turn-On Time tr VDD = 1.5 V, VGS(H) = 0 V 1 td(off) VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram 4 ns Turn-Off Time tf 18 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NIP b. Pulse test: PW v300 ms duty cycle v3%. |
Numéro de pièce similaire - J108 |
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Description similaire - J108 |
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