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M27512-2F1 Fiches technique(PDF) 1 Page - STMicroelectronics |
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M27512-2F1 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 11 page 1/11 NOT FOR NEW DESIGN November 2000 This is information on a product still in production but not recommended for new designs. M27512 NMOS 512 Kbit (64Kb x 8) UV EPROM s FAST ACCESS TIME: 200ns s EXTENDED TEMPERATURE RANGE s SINGLE 5V SUPPLY VOLTAGE s LOW STANDBY CURRENT: 40mA max s TTL COMPATIBLE DURING READ and PROGRAM s FAST PROGRAMMING ALGORITHM s ELECTRONIC SIGNATURE s PROGRAMMING VOLTAGE: 12V DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ce- ramic Frit-Seal Dual-in-Line package. The trans- parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pat- tern can then be written to the device by following the programming procedure. Figure 1. Logic Diagram AI00765B 16 Q0-Q7 VCC M27512 GVPP VSS 8 A0-A15 E 1 28 FDIP28W (F) |
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