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FQPF10N20L Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FQPF10N20L Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2000 Fairchild Semiconductor International Rev. A2, December 2000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ V SD, Source-Drain voltage [V] 02 468 10 10 -1 10 0 10 1 150℃ 25℃ -55℃ ※ Notes : 1. V DS = 30V 2. 250μs Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 ※ Note : T J = 25 ℃ V GS = 5V V GS = 10V I D , Drain Current [A] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 V DS = 100V V DS = 40V V DS = 160V ※ Note : I D = 10 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 300 600 900 1200 1500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
Numéro de pièce similaire - FQPF10N20L |
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Description similaire - FQPF10N20L |
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