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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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STP60NF06 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STP60NF06 Fiches technique(HTML) 4 Page - STMicroelectronics |
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4 / 12 page  Electrical characteristics STP60NF06 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID = 250 µA, VGS = 0 60 V IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating 1 µA VDS=Max rating, TC=125°C 10 µA IGSS Gate-body leakage current (VDS = 0) VGS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A 0.014 0.016 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS = 15V, ID=30A 50 S Ciss Input capacitance VDS = 25V, f = 1 MHz, VGS = 0 1660 pF Coss Output capacitance 400 pF Crss Reverse transfer capacitance 140 pF Qg Total gate charge VDD = 30V, ID = 60A, VGS = 10V (see Figure 12) 54 73 nC Qgs Gate-source charge 9 nC Qgd Gate-drain charge 23 nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 30V, ID = 30A RG =4.7Ω VGS = 10V (see Figure 11) 15 65 ns ns td(off) tf Turn-off-delay time Fall time VDD = 30V, ID = 30A, RG =4.7Ω, VGS =10V (see Figure 11) 45 20 ns ns |
Numéro de pièce similaire - STP60NF06_07 |
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Description similaire - STP60NF06_07 |
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