TPCS8204 datasheet(3/7 Pages) TOSHIBA

No de pièce	TPCS8204

Description	Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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TPCS8204

2004-07-06

3

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±10

µA

Drain cut-OFF current

IDSS

VDS = 20 V, VGS = 0 V

⎯

10

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −12 V

8

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 200 µA

0.5

⎯

1.2

V

VGS = 2.0 V, ID = 4.2 A

⎯

24

35

VGS = 2.5 V, ID = 4.2 A

⎯

18

22

Drain-source ON resistance

RDS (ON)

VGS = 4.0 V, ID = 4.8 A

⎯

13

17

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3.0 A

7.5

15

⎯

S

Input capacitance

Ciss

⎯

2160

⎯

Reverse transfer capacitance

Crss

⎯

210

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

230

⎯

pF

Rise time

tr

⎯

5

⎯

Turn-ON time

ton

⎯

13

⎯

Fall time

tf

⎯

10

⎯

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 µs

⎯

53

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

22

⎯

Gate-source charge 1

Qgs1

⎯

4

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− 16 V, VGS = 5 V, ID = 6 A

⎯

5

⎯

nC

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

24

A

Forward voltage (diode)

VDSF

IDR = 6 A, VGS = 0 V

⎯

−1.2

V

VDD ∼− 10 V

0 V

VGS

5 V

ID = 3 A

VOUT

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