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L6353 Fiches technique(PDF) 8 Page - STMicroelectronics

No de pièce L6353
Description  SMART DRIVER FOR POWER MOS & IGBT
Download  11 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6353 Fiches technique(HTML) 8 Page - STMicroelectronics

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VCLAMP_PROG =
VCL
6
with
7V < VCL <11V
Leaving the CLAMP_PROG pin floating the VCL
level is set to 9V. If the pin is grounded the func-
tion is inhibited (i.e. no intermediate step during
the firing).
Third step
Parameter: VONth
At the end of the tMON_DELAY the gate of the
driven device is pulled toward the VPOS level in
order to ensure an appropriate drive to minimize
the power losses. The external power device is
considered in overload whenever the voltage on
its output, sensed via the VON_SENSE pin, is above
VONth. The comparison value is programmable
setting at a certain level, by means of a resistive
divider, the ON_LEV_PROG pin according to the
following formula:
VON_LEV_PROG =VONth. 0.17
with
5V < VONth. < 15V
and
VONth.< VCC -1V.
If the ON_LEV_PROG pin is left floating theVONth.
level is set to 7.5V.
The overload status is signalled via the ALARM
pin, active LOW. To inhibite the VON Monitor func-
tion, the VSENSE pins must be grounded.
THERMAL PROCEDURE
As the junction temperature raises, two different
events will take place. When the Over Tempera-
ture Threshold (Tth1), set at 130
°C is reached, the
ALARM output is activated (low level). If the tem-
perature keeps on raising, up to the Over Tem-
peratur Shutdown (Tth2 = 160
°C Typ) the output
power device is turned off until the temperature
decrease. To prevent an oscillating behaviour
both the thresholds have a built-in hysteresis of
20
°C.
UNDERVOLTAGE LOCK OUT
To avoid operation with non optimal drive of the
external power device, an Undervoltage Lockout
function is implemented. The OUT1 pin is forced
close to VSS until the VCC supply voltage has
reached the
Undervoltage Upper Threshold
(VCCth2) value. If the supply voltage falls below
the lower hysteresis value (i.e. VCCth1 -VCChys)
the OUT1 will be again forced close to VSS. The
built-in hysteresis will thus avoid intermittent func-
tioning of the device at low supply voltage that
may have a superimposed ripple.
Vs
D94IN126B
Vccth
Vcchys
Undervoltage Comparator Hysteresis
L6353
8/11


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