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L6115 Fiches technique(PDF) 3 Page - STMicroelectronics |
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L6115 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 11 page ELECTRICAL CHARACTERISTICS (Tj = 25 oC, VCC = 40V, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 14 48 V ICC Supply Current All VIN = H VEN = Square Wave (200kHz, 50 % DC) 9mA IQ Quiescent Current VEN = L 2 3 mA BVDSS Drain Source Breakdown Voltage ID = 1mA, VEN = L 100 V IDSS Output Leakage Current VEN = L VDS = 100V VDS = 80V, Tj = 125 °C1 1 mA RDS (on) (*) Static Drain-source on Resistance VCC ≥ 14V, ID = 1.5A VEN, VIN = H 0.7 Ω VIN L, VEN L Input Low Voltage – 0.3 0.8 V VIN H, VEN H Input High Voltage 2 7 V IIN L, IEN L Input Low Current VIN, VEN = L – 100 µA IIN H, IEN H Input High Current VIN, VEN = H 10 µA td (on) Turn on Delay Time ID = 1.5A See Test Circuit and Waveforms 300 ns tr Rise Time 100 ns td (off) Turn off Delay Time 400 ns tf Fall Time 100 ns VSD (*) Source Drain Diode Forward Voltage ISD = 1.5A, VEN = L 1.5 V VSD (on) (*) Source Drain Forward Voltage ISD = 1.5A - VIN, VEN = H 1.2 V (*) Pulse test : pulse width = 300 µs, duty cycle = 2 %. L6114 - L6115 3/11 |
Numéro de pièce similaire - L6115 |
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Description similaire - L6115 |
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