HCF4041BC1 datasheet(4/12 Pages) STMICROELECTRONICS

No de pièce	HCF4041BC1

Description	QUAD TRUE/COMPLEMENT BUFFER

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STATIC ELECTRICAL CHARACTERISTICS (continued)

Test Conditions

Value

V I

V O

|I O |V DD

T Lo w*

25

°CT

Hi g h *

Symbol

Parameter

(V)

(

µA) (V)

Min. Max. Min. Typ. Max. Min. Max.

Unit

VIL

Input Low

Voltage

4.5/0.5

< 1

5

1

V

9/1

< 1

10

2

13.5/1.5

< 1

15

2.5

I OH

Output

Drive

Current

HCC

Types

0/ 5

2.5

5

– 8.4

– 6.4 – 12.8

– 4.6

mA

0/ 5

4.6

5

– 2.1

– 1.6 – 3.2

– 1.2

0/10

9.5

10

– 6.25

– 5

– 10

– 3.5

0/15

13.5

15

– 24

– 19

– 38

– 13

HCF

Types

0/ 5

2.5

5

– 6.8

– 5.44 – 12.8

– 4.08

0/ 5

4.6

5

– 1.7

– 1.36 – 3.2

– 1.02

0/10

9.5

10

– 5.31

– 4.25 – 10

– 3.18

0/15

13.5

15

–20.18

–16.15 –38

–12.11

I OL

Output

Sink

Current

HCC

Types

0/ 5

0.4

5

2.1

1.6

3.2

1.2

0/10

0.5

10

6.25

5

10

3.5

0/15

1.5

15

24

19

38

13

HCF

Types

0/ 5

0.4

5

1.7

1.36

3.2

1.02

0/10

0.5

10

5.31

4.25

10

3.18

0/15

1.5

15

20.18

16.15

38

12.11

I IH,IIL

Input

leakage

Current

HCC

Types

0/18

Any Input

18

± 0.1

±10–5 ± 0.1

± 1

µA

HCF

Types

0/15

15

± 0.3

±10–5 ± 0.3

± 1

CI

Input Capacitance

Any Input

15

22.5

pF

*TLow =– 55

°Cfor HCC device : – 40°Cfor HCF device.

*THigh = + 125

°Cfor HCC device : + 85°Cfor HCF device.

The Noise Margin for both ”1” and ” 0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.

DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25°C, CL = 50pF, RL = 200kΩ,

typical temperature coefficient for all VDD values is 0.3 %/°C, all input rise and fall times = 20ns)

Test Conditions

Val ue

Symbol

Parameter

V DD (V) Min.

Typ.

Max.

Unit

t PLH,tPHL

Propagation Delay Time

5

60

120

ns

10

35

70

15

25

50

t THL,tTL H

Transition Time

5

40

80

ns

10

20

40

15

30

HCC/HCF4041UB

4/12

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