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ST1336 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce ST1336
Description  Memory Micromodules General Information for D1, D2 and C Packaging
Download  13 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST1336 Fiches technique(HTML) 5 Page - STMicroelectronics

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MICROMODULES
5/13
RELIABILITY
Product
qualification
and
on-going
reliability
monitoring is performed by ST. The principal steps
are listed in Table 8 and Table 9.
Table 8. Package Related Tests
Note: 1. The notation
m/n means: reject the whole lot if more than m devices fail from a sample of n devices. For instance, 0/45 means a
sample of 45 devices taken from a lot, with the whole lot only accepted if every one of the 45 sample devices passed the test.
Table 9. Product Related Tests
Test
Description
Method
Condit ion
LPTD
Criteria
(note 1)
1
Geometry
ST Specification
Monitoring/Lot
5
0/45
2
Visual inspection
ST Specification
Outgoing/Lot
AQL= 0.040
0/315
3
Temperature cycling
MIL-STD-883
Method 1010
-40
°Cto 150 °C, 100 cycles
5
0/45
4
Salt atmosphere
corrosion of contacts
MIL-STD-883
Method 1009
35
°C, 5% NaCl, 24 hour
15
0/15
5
Moisture resistance
MIL-STD-883
Method 1004
85
°C, 85% HR Biased 5.5 V,
168 hour
7
0/32
6
Vibration with electrical
measurement
ISO/IEC 10373
1 octave/minute, acceleration up to
10 G (repeated 20 times)
measurement memory check at 25
°C
20
0/11
7
Bending properties
ISO/IEC 7816-1
Long side: deflection 2 cm
Short side: deflection 1 cm
30 bendings per minute
20
0/11
8
Torsion properties
ISO/IEC 7816-1
Maximum displacement 15
°±1°
1000 torsions, 30 torsions per minute
applied on long side only
20
0/11
Test
Description
Method
Condit ion
LPTD
Criteria
1
Life test
MIL-STD-883
Method 1005
140
°C, 6 V, 504 hours measurement
memory check at 25
°C
3
0/76
2
Electrostatic discharge
MIL-STD-883
Method 3015
Human body model:
1.5 k
Ω, 100 pF, ± 5000 V
n/a
0/9
Electrostatic discharge
MIL-STD-883
Method 3015
Machine model: 0
Ω, 200 pF, ± 200 V
measurement memory check at 25
°C
n/a
0/9
3
Data retention,
Temperature storage
MIL-STD-883
Method 1005
150
°C, 1000 hours, no bias
measurement memory check at 25
°C
5
0/45
4
Write/Erase cycles
ST Specification
100,000 Cycles
200 ppm/
1024 byte/
1000 cycle
0/32
5
Magnetic field, memory
check
ISO IEC 10373
79,500 A/m
15
1/25
6
X-rays, memory check
ISO IEC 10373
70 kV, 0.1 Grey
15
1/25
7
UV light, memory check
ISO IEC 10373
15 W.s/cm2, 30 minutes maximum
15
1/25


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