BUK7510-55AL datasheet(1/14 Pages) PHILIPS

No de pièce	BUK7510-55AL

Description	N-channel TrenchMOS standard level FET

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP General-Purpose Automotive (GPA) TrenchMOS technology

specifically optimized for linear operation. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1]

Continuous current is limited by package.

BUK7510-55AL

N-channel TrenchMOS standard level FET

Rev. 02 — 3 January 2008

Product data sheet

175

°C rated

Q101 compliant

Stable operation in linear mode

TrenchMOS technology

12 V and 24 V loads

Automotive systems

DC linear motor control

Repetitive clamped inductive switching

Table 1.

Quick reference

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ID

drain current

VGS =10 V; Tmb =25 °C;

see Figure 1 and 4

[1] --75

A

Ptot

total power dissipation Tmb =25 °C; see Figure 2

--300

W

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =75A; Vsup ≤ 55 V;

RGS =50 Ω; VGS =10V;

Tj(init) =25 °C; unclamped

inductive load

--1.1

J

Static characteristics

RDSon

drain-source on-state

resistance

VGS =10 V; ID =25A;

Tj =25 °C; see Figure 12

and 13

-8.5

10

m

Ω

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