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BTA201-800ER Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BTA201-800ER Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page BTA201_SER_B_E_ER_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 4 February 2008 4 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values f = 50 Hz; Tlead ≤ 54.3 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values 003aaa955 tp (s) 10−5 10−1 10−2 10−4 10−3 102 103 ITSM (A) 10 (1) ITSM t IT Tj(init) = 25 °C max tp 001aag961 1 2 3 IT(RMS) (A) 0 surge duration (s) 10−2 10 1 10−1 Tlead (°C) −50 150 100 050 001aag960 IT(RMS) (A) 0.4 0.8 1.2 0.2 0.6 1.0 0 54.3 °C |
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