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BTA202X-600E Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BTA202X-600E
Description  2 A Three-quadrant triacs high commutation
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BTA202X-600E Fiches technique(HTML) 3 Page - NXP Semiconductors

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BTA202X_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
3 of 12
NXP Semiconductors
BTA202X series D and E
2 A Three-quadrant triacs high commutation
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
µs.
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C
Table 3.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
α = conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aac112
0
1
2
3
0
0.4
0.8
1.2
1.6
2
IT(RMS) (A)
Ptot
(W)
α= 180°
120
°
90
°
60
°
30
°
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
003aac110
0
4
8
12
16
20
1
10
10
2
10
3
number of cycles
ITSM
(A)
ITSM
t
IT
Tj(init) = 25 °C max
1/f


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