BDX34B datasheet(1/4 Pages) STMICROELECTRONICS

No de pièce	BDX34B

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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BDX33B BDX33C

BDX34B BDX34C

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

DESCRIPTION

The

BDX33B

and

BDX33C

are

silicon

Epitaxial-Base

NPN

power

transistors

in

monolithic Darlington configuration mounted in

Jedec TO-220 plastic package. They are intented

for use in power linear and switching applications.

The complementary PNP types are BDX34B and

BDX34C respectively.

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Un it

NPN

BDX33B

BDX33C

PNP

BDX34B

BDX34C

VCBO

Collector-Base Voltage (IE = 0)

80

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

100

V

IC

Collector Current

10

A

ICM

Collector Peak Current

15

A

IB

Base Current

0. 25

A

Ptot

T otal Dissipat ion at Tc

≤ 25 oC

70

W

Tstg

Storage Temperature

-65 t o 150

o C

Tj

Max. Operating Junction Temperature

150

o C

For PNP types voltage and current values are negative.

1

2

3

TO-220

R1 Typ. = 10 K

Ω

R2 Typ. = 150

Ω

1/4

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