BCW66G datasheet(1/4 Pages) STMICROELECTRONICS

No de pièce	BCW66G

Description	SMALL SIGNAL NPN TRANSISTORS

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BCW66

SMALL SIGNAL NPN TRANSISTORS

s

SILICON EPITAXIAL PLANAR NPN

TRANSISTORS

s

MINIATURE PLASTIC PACKAGE FOR

APPLICATION IN SURFACE MOUNTING

CIRCUITS

s

MEDIUM CURRENT AF AMPLIFICATION

AND SWITCHING

s

PNP COMPLEMENT IS BCW68

INTERNAL SCHEMATIC DIAGRAM

October 1997

1

2

3

SOT-23

Type

Marking

BCW66F

EF

BCW 66G

EG

BCW 66H

EH

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

VCES

Collector-Emit ter Voltage (VBE =0)

75

V

VCEO

Collector-Emit ter Voltage (IB =0)

45

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IC

Collector Current

0.8

A

ICM

Collector Peak Current

1

A

IB

Base Current

0.1

A

Ptot

Tot al Dissipation at Tc =25

oC

360

mW

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. O perat ing Junction Temperature

150

oC

1/4

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