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FGB3040CS Fiches technique(PDF) 5 Page - Fairchild Semiconductor |
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FGB3040CS Fiches technique(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page FGB3040CS Rev. A www.fairchildsemi.com 5 Figure 13. Leakage Current vs. Junction Temperature Figure 14. Switching Time vs. Junction Temperature Figure 15. Capacitance vs. Collector to Emitter Voltage Figure 16. Gate Charge Figure 17. Break down Voltage vs. Series Gate Resistance Typical Performance Curves -50 -25 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 V CES = 250V V CES = 300V V ECS = 24V TJ, JUNCTION TEMPERATURE ( oC) 25 50 75 100 125 150 175 0 2 4 6 8 10 12 Resistive t ON Inductive t OFF Resistive t OFF T J, JUNCTION TEMPERATURE ( oC) I CE = 6.5A, VGE = 5V, RG = 1KΩ 0 5 10 15 20 25 30 0 400 800 1200 1600 2000 f = 1MHz VGE = 0V CRES COES CIES VDS, DRAIN TO SOURCE VOLTAGE (V) 0 5 10 15 20 25 30 35 0 2 4 6 8 10 ICE = 10A, TJ = 25 oC VCE = 6V Qg, GATE CHARGE(nC) VCE = 12V 10 100 1000 395 400 405 410 415 T J = 25 oC T J = -40 oC T J = 175 oC I CER = 10mA RG, SERIES GATE RESISTANCE (Ω) 6000 (Continued) |
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Description similaire - FGB3040CS |
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