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KA2S0680B Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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KA2S0680B Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page KA2S0680B 3 Electrical Characteristics (SFET part) (Ta=25 °C unless otherwise specified) Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50 µA 800 - - V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V -- 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=4.0A - 1.6 2.0 Ω Forward transconductance (note) gfs VDS=15V, ID=4.0A 1.5 2.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1600 - pF Output capacitance Coss - 140 - Reverse transfer capacitance Crss - 42 - Turn on delay time td(on) VDD=0.5BVDSS, ID=6.0A (MOSFET switching time are essentially independent of operating temperature) -60 - nS Rise time tr - 150 - Turn off delay time td(off) - 300 - Fall time tf - 130 - Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=6.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -70 - nC Gate-source charge Qgs - 16 - Gate-drain (Miller) charge Qgd - 27 - S 1 R ---- = |
Numéro de pièce similaire - KA2S0680B |
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Description similaire - KA2S0680B |
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