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LD242-2 Fiches technique(PDF) 2 Page - OSRAM GmbH

No de pièce LD242-2
Description  GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
Download  7 Pages
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Fabricant  OSRAM [OSRAM GmbH]
Site Internet  http://www.osram.com
Logo OSRAM - OSRAM GmbH

LD242-2 Fiches technique(HTML) 2 Page - OSRAM GmbH

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2007-12-07
2
LD 242
Grenzwerte (
T
A = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 40
… + 80
°C
Sperrspannung
Reverse voltage
V
R
5
V
Durchlassstrom
Forward current
I
F
300
mA
Stoßstrom,
τ ≤ 10 µs, D = 0
Surge current
I
FSM
3
A
Verlustleistung
Power dissipation
P
tot
470
mW
Wärmewiderstand
Thermal resistance
R
thJA
R
thJC
450
160
K/W
K/W
Kennwerte (
T
A = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
I
F = 100 mA, tp = 20 ms
λ
peak
950
nm
Spektrale Bandbreite bei 50% von
I
max
Spectral bandwidth at 50% of
I
max
I
F = 100 mA, tp = 20 ms
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ
± 40
Grad
deg.
Aktive Chipfläche
Active chip area
A
0.25
mm
2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L × B
L × W
0.5
× 0.5
mm²
Abstand Chipoberfläche bis Linsenscheitel
Distance chip surface to lens top
H
0.3
… 0.7
mm


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