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2N3771 Fiches technique(PDF) 1 Page - STMicroelectronics |
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2N3771 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 4 page 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. INTERNAL SCHEMATIC DIAGRAM June 1997 1 2 TO-3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 2N3772 VCEO Collector-Emitter Voltage (IE = 0) 40 60 V VCEV Collector-Emitter Voltage (VBE = -1.5V) 50 80 V VCBO Collector-Base Voltage (IB = 0) 50 100 V VEBO Emitter-Base Voltage (IC = 0) 5 7 V IC Collector Current 30 20 A ICM Collector Peak Current 30 30 A IB Base Current 7.5 5 A IBM Base Peak Current 15 15 A Ptot Total Dissipation at Tc ≤ 25 oC 150 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC 1/4 |
Numéro de pièce similaire - 2N3771 |
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Description similaire - 2N3771 |
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