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TD62503PFG Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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TD62503PFG Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 12 page TD62501~507PG/FG 2006-06-14 3 Schematics (Each driver) TD62505PG/FG TD62506PG/FG TD62507PG/FG ∗: Parasitic diodes Note: The input and output parasitic diodes cannot be used as clamp diodes. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCEO 35 V Collector-base voltage VCBO 50 V Collector current IC 200 mA/ch VIN (Note 1) −0.5 to 45 Input voltage VIN (Note 2) −0.5 to 30 V Input current IIN (Note 3) 25 mA Isolation voltage VSUB 35 V PG 1.0 Power dissipation FG PD 0.625 (Note 4) W Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 150 °C Note 1: TD62506PG/FG Note 2: TD62502PG/FG, TD62503PG/FG, TD62504PG/FG Note 3: TD62501PG/FG, TD62505PG/FG, TD62507PG/FG Note 4: On Glass Epoxy PCB (30 × 30 × 1.6 mm Cu 50%) (*) (*) (*) (*) (*) (*) Input Common collector SUB Output 2.7 k Ω (*) (*) GND (SUB) (*) (*) (*) (*) (*) (*) (*) (*) Common collector SUB Output (*) (*) (*) (*) (*) (*) |
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