TC7SA32FU datasheet(3/9 Pages) TOSHIBA

No de pièce	TC7SA32FU

Description	2-Input OR Gate

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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TC7SA32F/FU

2007-11-01

3

Electrical Characteristics

DC Characteristics (Ta = −40~85°C, 2.7 V < VCC <= 3.6 V)

DC Characteristics (Ta = −40~85°C, 2.3 V <= VCC <= 2.7 V)

Characteristics

Symbol

Test Condition

VCC (V)

Min

Max

Unit

High level

VIH

⎯

2.7~3.6

2.0

⎯

Input voltage

Low level

VIL

⎯

2.7~3.6

⎯

0.8

V

IOH = −100 μA

2.7~3.6

VCC

− 0.2

⎯

IOH = −12 mA

2.7

2.2

⎯

IOH = −18 mA

3.0

2.4

⎯

High level

VOH

VIN = VIH or VIL

IOH = −24 mA

3.0

2.2

⎯

IOL = 100 μA

2.7~3.6

⎯

0.2

IOL = 12 mA

2.7

⎯

0.4

IOL = 18 mA

3.0

⎯

0.4

Output voltage

Low level

VOL

VIN = VIL

IOL = 24 mA

3.0

⎯

0.55

V

Input leakage current

IIN

VIN = 0~3.6 V

2.7~3.6

⎯

±5.0

μA

Power off leakage current

IOFF

VIN, VOUT = 0~3.6 V

0

⎯

10.0

μA

VIN = VCC or GND

2.7~3.6

⎯

20.0

Quiescent supply current

ICC

VCC <= (VIN, VOUT) <= 3.6 V

2.7~3.6

⎯

±20.0

Increase in ICC per input

ΔICC

VIH = VCC − 0.6 V

2.7~3.6

⎯

750

μA

Characteristics

Symbol

Test Condition

VCC (V)

Min

Max

Unit

High level

VIH

⎯

2.3~2.7

1.6

⎯

Input voltage

Low level

VIL

⎯

2.3~2.7

⎯

0.7

V

IOH = −100 μA

2.3~2.7

VCC

− 0.2

⎯

IOH = −6 mA

2.3

2.0

⎯

IOH = −12 mA

2.3

1.8

⎯

High level

VOH

VIN = VIH or VIL

IOH = −18 mA

2.3

1.7

⎯

IOL = 100 μA

2.3~2.7

⎯

0.2

IOL = 12 mA

2.3

⎯

0.4

Output voltage

Low level

VOL

VIN = VIL

IOL = 18 mA

2.3

⎯

0.6

V

Input leakage current

IIN

VIN = 0~3.6 V

2.3~2.7

⎯

±5.0

μA

Power off leakage current

IOFF

VIN, VOUT = 0~3.6 V

0

⎯

10.0

μA

VIN = VCC or GND

2.3~2.7

⎯

20.0

Quiescent supply current

ICC

VCC <= (VIN, VOUT) <= 3.6 V

2.3~2.7

⎯

±20.0

μA

Numéro de pièce similaire - TC7SA32FU

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TC7SA34F	168Kb / 9P	Non-Inverter with 3.6 V Tolerant Input and Output
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