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STD11NM60N-1 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STD11NM60N-1
Description  N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD11NM60N-1 Fiches technique(HTML) 3 Page - STMicroelectronics

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STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Electrical ratings
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/I²PAK
DPAK/IPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
10
10(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
6.3
6.3 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
40
40(1)
A
PTOT
Total dissipation at TC = 25 °C
90
25
W
Derating factor
0.8
0.2
W/°C
dv/dt (3)
3.
ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s;TC = 25 °C)
--
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 / I²PAK
DPAK / IPAK
TO-220FP
Rthj-case
Thermal resistance junction-case max
1.38
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purposes
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
3.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
200
mJ


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