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TA76432FT Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TA76432FT Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 13 page TA76432FT/FC/F/FR/S 2006-11-06 4 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Cathode voltage VKA 20 V Cathode current IK 20 mA Cathode-anode reverse current −IK 10 mA Reference voltage VREF 7 V Reference current IREF 50 μA Reference-anode reverse current −IREF 10 mA TA76432FT 0.45 (Note 1) 0.2 TA76432FC 0.38 (Note 2) TA76432F/FR 0.5 Power dissipation TA76432S PD 0.8 W TA76432FT 277 (Note 1) 625 TA76432FC 328 (Note 2) TA76432F/FR 250 Thermal resistance TA76432S Rth 156 ºC/W Operating temperature Topr −40∼85 ºC Junction temperature Tj 150 ºC Storage temperature Tstg −55∼150 ºC Note 1: Glass epoxy board mounting: 30 mm × 30 mm × 0.8 mmt (Cu pad area 35 mm 2 ) Note 2: Glass epoxy board mounting: 30 mm × 30 mm × 0.8 mmt (Cu pad area 50 mm 2 ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Cathode voltage VKA VREF ⎯ 19 V Cathode current IK 0.5 ⎯ 15 mA Operating temperature Topr −40 ⎯ 85 °C |
Numéro de pièce similaire - TA76432FT_06 |
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Description similaire - TA76432FT_06 |
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