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TA7522S Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TA7522S Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 9 page TA7522S/F 2005-03-29 4 Electrical Characteristics (Ta = –40 to +85°C) Characteristic Symbol Test Circuit Test Condition Min Typ. (Note) Max Unit Voltage gain GV 1 VCC = 6 V, RL = 1 kΩ f = 10 Hz, test circuit 1 60 95 ― dB Input offset voltage VIO 2 VCC = 6 V, RL = 1 kΩ CMVIN = 3 V, test circuit 2 ― 2 10 mV Input bias current II 3 VCC = 6 V, CMVIN = 3 V test circuit 3 ― −0.2 −2 µA Input offset current IIO 3 Same as above ― 0.02 0.3 µA CMVIL VCC = 6.5 V, RL = 1 kΩ VIO = 20 mV, test circuit 4 ― −0.5 0 V Common-mode input voltage CMVIH 4 Same as above 5.0 5.3 ― V OUT1 OUT2 VCC = 5.5 V, VIN = 0.1 V IOL = 10 mA, test circuit 5 ― 0.18 0.4 V Zero output voltage VOL OUT1 5 VCC = 5.5 V, VIN = 0.1 V, IOL = 15 mA, VOL (out1) ≧2 V, test circuit 5 ― 0.25 0.4 V OUT1 OUT1 OUT2 6 VCC = 6 V, VOUT = 30 V test circuit 6 ― ― 10 µA Output leakage current ILEAK OUT1 6 VCC = 6 V, VOUT = 0.4 V test circuit 6 ― −1.5 −10 µA Current consumption ICC 7 VCC = 6.5 V, RL = ∞ test circuit 7 ― 3 7 mA Note: An ambient temperature of 25°C is assumed for the typical values. |
Numéro de pièce similaire - TA7522S |
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Description similaire - TA7522S |
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