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TA4004F Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TA4004F Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TA4004F 2007-11-01 1 TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4004F VHF~UHF Wide Band Amplifier Features Band width: 1.2 GHz (typ.) (3dB down, VCC = 2 V) High gain: |S21|2 = 10.5dB (typ.) (f = 500 MHz, VCC = 2 V) Operating supply voltage: VCC = 2~5 V Low current operation: ICC = 3.1 mA (typ.) (VCC = 2 V) Small package Pin Assignment (top view) Marking Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage VCC 6 V Total power dissipation PD (Note 1) 300 mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: When mounted glass epoxy of 2.5 cm 2 × 1.6 t Weight: 0.014 g (typ.) |
Numéro de pièce similaire - TA4004F_07 |
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Description similaire - TA4004F_07 |
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