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TA1275BFNG Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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TA1275BFNG Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 21 page TA1275BFNG 2005-03-14 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage VCCmax 8 V Input pin voltage Vin GND - 0.3 ~ Vcc + 0.3 V Power consumption PD (Note) 780 mW Power consumption reduction ratio 1 / Qja 6.3 mW / °C Operating temperature Topr −30~85 °C Storage temperature Tstg −55~150 °C Note: When using the device at above TA = 25°C, decrease the power dissipation by 9.1 mW for each increase of 1°C. The absolute maximum ratings of a semiconductor device are a set of specified parameter values that must not be exceeded during operation, even for an instant. If any of these ratings are exceeded during operation, the electrical characteristics of the device may be irreparably altered, in which case the reliability and lifetime of the device can no longer be guaranteed. Moreover, operations with exceeded ratings may cause breakdown, damage and/or degradation in other equipment. Applications using the device should be designed so that no maximum rating will ever be exceeded under any operating conditions. Before using, creating and/or producing designs, refer to and comply with the precautions and conditions set forth in these documents. Operating Conditions Characteristic Description Min Typ. Max Unit Supply voltage Pin 2, 15 4.75 5.0 5.25 ― Y Input signal level White: 100%, including sync. 0.9 1.0 1.1 V (p-p) Color difference input level Burst level 270 300 330 mV (p-p) G level 3.25 4.0 5.0 H level 1.95 2.1 2.6 SCP input level V level 1.1 1.25 1.4 V 4.43 MHz CW input level Pin 4 200 ― ― mV (p-p) Electrical Characteristics (YC VCC / Pulse VCC = 5 V, Ta = 25°C, unless otherwise specified) Current Consumption Pin Name Symbol Test Circuit Min Typ. Max Unit VCC (Y / C) ICC1 ― 32.0 38.5 48.1 VCC (Pulse) ICC2 ― 5.6 6.7 8.4 mA |
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