TA75W01FU

2007-11-01

2

Equivalent Circuit

Characteristic

Symbol

Rating

Unit

Supply voltage

±6 or 12

V

Differential input voltage

±12

V

Input voltage

V

Power dissipation

250

mW

Operating temperature

−40~85

°C

Storage temperature

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Input offset voltage

1

―

2

7

mV

Input offset current

2

―

―

5

50

nA

Input bias current

2

―

―

45

250

nA

Common mode input voltage

3

―

0

―

V

Supply current

4

―

―

0.7

1.2

mA

Voltage gain

―

86

100

―

dB

Maximum output voltage swing

5

0

―

3.4

V

Common mode rejection ratio

CMRR

3

―

65

85

―

dB

Supply voltage rejection ratio

SVRR

―

65

100

―

dB

Source current

6

IN (−) = 0V, IN (+) = 1V

20

40

―

mA

Sink current

7

IN (−) = 1V, IN (+) = 0V

10

20

―

mA

Unity gain cross frequency

―

―

―

0.3

―

MHz