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TC74HCT4053AF Fiches technique(PDF) 5 Page - Toshiba Semiconductor |
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TC74HCT4053AF Fiches technique(HTML) 5 Page - Toshiba Semiconductor |
5 / 12 page TC74HCT4053AF/AFN/AFT 2007-10-01 5 AC Characteristics (CL = 50 pF, Input tr = tf = 6 ns, GND = 0 V) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VEE (V) VCC (V) Min Typ. Max Min Max Unit Phase difference between input and output φI/O GND GND GND 4.5 5.5 9.0 ⎯ ⎯ ⎯ 6 5 4 12 11 ⎯ ⎯ ⎯ ⎯ 15 14 ⎯ ns Output enable time tpZL tpZH (Note 1) GND GND GND 4.5 5.5 9.0 ⎯ ⎯ ⎯ 33 26 17 50 45 ⎯ ⎯ ⎯ ⎯ 63 57 ⎯ ns Output disable time tpLZ tpHZ (Note 1) GND GND GND 4.5 5.5 9.0 ⎯ ⎯ ⎯ 45 37 26 65 59 ⎯ ⎯ ⎯ ⎯ 81 73 ⎯ ns Control input capacitance Cin ⎯ ⎯ ⎯ 5 10 ⎯ 10 pF COMMON terminal capacitance CIS −5.0 5.0 ⎯ 11 20 ⎯ 20 pF SWITCH terminal capacitance COS −5.0 5.0 ⎯ 7 15 ⎯ 15 pF Feedthrough capacitance CIOS −5.0 5.0 ⎯ 0.75 2 ⎯ 2 pF Power dissipation capacitance CPD (Note 2) GND 5.0 ⎯ 67 ⎯ ⎯ ⎯ pF Note 1 RL = 1 kΩ Note 2: CPD is defined as the value of the internal equivalent capacitance of IC which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD · VCC · fIN + ICC |
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