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2SA1244 Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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2SA1244 Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SA1244 2006-11-09 4 Collector current IC (A) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta −0.1 −0.03 Common emitter IC/IB = 20 25 100 Tc = −55°C −10 −0.1 −0.3 −1 −3 −10 −0.3 −0.5 −1 −3 −5 −5 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −1 −2 −3 −4 Common emitter VCE = −1 V 25 −55 Tc = 100°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.1 −10 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Tc = 25°C −30 −100 −3 −10 −0.3 −1 −1 −0.03 −0.05 −0.1 −0.3 −0.5 −5 −3 28 0 0 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 20 40 60 80 100 120 160 4 8 12 16 20 (1) (2) (3) 24 140 |
Numéro de pièce similaire - 2SA1244_07 |
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Description similaire - 2SA1244_07 |
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