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2SA1201 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SA1201 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SA1201 2006-11-09 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA PC 500 Collector power dissipation PC (Note 1) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
Numéro de pièce similaire - 2SA1201_07 |
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Description similaire - 2SA1201_07 |
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