Moteur de recherche de fiches techniques de composants électroniques |
|
2SA1160 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
|
2SA1160 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SA1160 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −20 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −6 V, IC = 0 ⎯ ⎯ −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −10 ⎯ ⎯ V Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −6 ⎯ ⎯ V DC current gain hFE (1) (Note 3) VCE = −1 V, IC = −0.5 A 140 ⎯ 600 Collector-emitter saturation voltage hFE (2) VCE = −1 V, IC = −4 A 60 120 ⎯ Base-emitter saturation voltage VCE (sat) IC = −2 A, IB = −50 mA ⎯ −0.20 −0.50 V Base-emitter voltage VBE VCE = −1 V, IC = −2 A ⎯ −0.83 −1.5 V Transition frequency fT VCE = −1 V, IC = −0.5 A ⎯ 140 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 50 ⎯ pF Note 3: hFE (1) Classification A: 140 to 280, B: 200 to 400, C: 300 to 600 Marking A1160 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
Numéro de pièce similaire - 2SA1160 |
|
Description similaire - 2SA1160 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |