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1SV312 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 1SV312
Description  VHF~UHF Band RF Attenuator Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

1SV312 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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1SV312
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV312
VHF~UHF Band RF Attenuator Applications
• Two independent diodes mounted onto a 4-pin ultra compact package
and it is suitable for high-density circuit design.
• Low capacitance: CT = 0.25 pF (typ.)
• Low series resistance: rs = 3 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
50
V
Reverse current
IR
VR = 50 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.95
1
V
Total capacitance
CT
VR = 50 V, f = 1 MHz
0.25
0.4
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
3
Ω
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-2U1A
Weight: 0.006 g (typ.)


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