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1SV312 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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1SV312 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 2 page 1SV312 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF (typ.) • Low series resistance: rs = 3 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 10 μA 50 ⎯ ⎯ V Reverse current IR VR = 50 V ⎯ ⎯ 0.1 μA Forward voltage VF IF = 50 mA ⎯ 0.95 1 V Total capacitance CT VR = 50 V, f = 1 MHz ⎯ 0.25 0.4 pF Series resistance rs IF = 10 mA, f = 100 MHz ⎯ 3 ⎯ Ω Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-2U1A Weight: 0.006 g (typ.) |
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