IRFY9130C datasheet(1/7 Pages) IRF

No de pièce	IRFY9130C

Description	POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHANNEL HEXFET짰 MOSFET TECHNOLOGY

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Fabricant	IRF [International Rectifier]

Site Internet	http://www.irf.com

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -10V, TC = 25°C

Continuous Drain Current

-11.2

ID @ VGS = -10V, TC = 100°C

Continuous Drain Current

-7.1

IDM

Pulsed Drain Current ➀

-44

PD @ TC = 25°C

Max. Power Dissipation

75

W

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

400

mJ

IAR

Avalanche Current ➀

-11.2

A

EAR

Repetitive Avalanche Energy ➀

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

-5.5

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300(0.063in./1.6mm from case for 10 sec)

Weight

4.3 (Typical)

g

PD - 91293B

HEXFET® MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance.

HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required.

The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

oC

A

POWER MOSFET

THRU-HOLE (TO-257AA)

4/18/01

www.irf.com

1

100V, P-CHANNEL

HEXFET

®

MOSFET TECHNOLOGY

TO-257AA

Product Summary

Part Number

RDS(on)

ID

Eyelets

IRFY9130C

0.3

Ω

-11.2A

Ceramic

IRFY9130CM

0.3

Ω

-11.2A

Ceramic

Features:

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Electrically Isolated

n Ceramic Eyelets

n Ideally Suited For Space Level

Applications

For footnotes refer to the last page

IRFY9130C,IRFY9130CM

Numéro de pièce similaire - IRFY9130C

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Seme LAB	IRFY9130C	15Kb / 1P	P-Channel MOSFET in a Hermetically sealed
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	IRFY9130CM	300Kb / 6P	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A)
	IRFY9130C	834Kb / 7P	Simple Drive Requirements

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