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SSM3J16TE Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce SSM3J16TE
Description  Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3J16TE Fiches technique(HTML) 4 Page - Toshiba Semiconductor

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SSM3J16TE
2007-11-01
4
⎪Yfs⎪ – ID
IDR – VDS
Drain current ID (mA)
Drain - Source VDS (V)
Drain- Source voltage VDS (V)
Drain current ID (mA)
10
-0.1
100
300
10000
1000
-100
-1
-10
30
50
500
3000
5000
Common Source
VDD = -3 V
VGS = 0~-2.5 V
Ta
= 25°C
tr
ton
tf
toff
-0.1
10
200
100
-100
-1
-10
Common Source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
Crss
Coss
Ciss
1
-1
10
30
1000
100
-1000
-10
-100
3
5
50
300
500
Common Source
VDS =−3 V
Ta
= 25°C
0
0
-100
-250
1.4
0.4
-50
-150
-200
0.2
0.6
0.8
1
1.2
Common Source
VGS = 0 V
Ta
= 25°C
G
D
S
IDR
c – VDS
t – ID
1
0
0
100
250
160
40
50
150
200
20
60
80
100
140
120
PD – Ta
Ambient temperature Ta (°C)
Mounted on FR4 board
(25.4mmX25.4mmX1.6t
CU Pad:0.6mm2X3


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