2SK3565_06 datasheet(5/6 Pages) TOSHIBA

No de pièce	2SK3565

Description	Silicon N Channel MOS Type Switching Regulator Applications

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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5 / 6 page

2SK3565

2006-11-10

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125

150

ドレイン･ソース間電圧

VDS (V)

SAFE OPERATING AREA

CHANNEL TEMPERATURE (INITIAL)

Tch (°C)

EAS – Tch

rth – tw

PULSE WIDTH tw (s)

0.01

1

0.1

1

10

100

10

1000

100

10000

※

SINGLE NONREPETITIVE PULSE

Tc=25℃

CURVES

MUST

BE

DERATED

LINEARLY WITH INCREASE IN

TEMPERATURE.

ID max (PULSED) *

ID max (CONTINUOUS) *

DC OPERATION

Tc

= 25°C

100

μs *

1 ms *

VDSS max

−15 V

15 V

TEST CIRCUIT

WAVE FORM

IAR

BVDSS

VDD

VDS

RG = 25 Ω

VDD = 90 V, L = 43.6mH

⎟

⎠

⎞

⎜

⎝

⎛

−

⋅

=

VDD

BVDSS

2

I

L

2

1

ΕAS

T

PDM

t

Duty

= t/T

Rth (ch-c) = 1.25°C/W

Duty=0.5

0.2

0.1

SINGLE PULSE

0.05

0.02

0.01

10μ

0.1

1

10

100μ

1ｍ

10ｍ

100ｍ

1

10

T

PDM

t

Duty

= t/T

Rth (ch-c) = 2.78°C/W

0.001

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2SK3565 Fiches technique(PDF) 5 Page - Toshiba Semiconductor

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