2SK3075_07 datasheet(2/4 Pages) TOSHIBA

No de pièce	2SK3075

Description	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SK3075

2007-11-01

2

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Output Power

PO

7.5

—

W

Drain Efficiency

ηD

50

—

%

Power Gain

GP

VDS = 9.6V

Iidle = 50mA (VGS = adjust)

f = 520MHz, Pi = 500mW

11.7

—

dB

Gate Threshold Voltage

Vth

VDS = 9.6V, ID = 0.5mA

1.0

1.5

2.0

V

Drain Cut-off Current

IDSS

VDS = 20V, VGS = 0

—

10

μA

Gate-Source Leakage Current

IGSS

VGS = 10V, VDS = 0

—

5

μA

HANDLING PRECAUTION

• When handling individual devices, be sure that working desks, human bodies and soldering iron are protected

against electrostatic electricity.

RF OUTPUT POWER TEST FIXTURE

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2SK3075 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

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