2SJ620_06 datasheet(1/6 Pages) TOSHIBA

No de pièce	2SJ620

Description	Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

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Fabricant	TOSHIBA [Toshiba Semiconductor]

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2SJ620

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)

2SJ620

Switching Regulator and DC-DC Converter Applications

Motor Drive Applications

• 4-V gate drive

• Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 15 S (typ.)

• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)

• Enhancement model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−100

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−100

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

−18

Drain current

Pulse (Note 1)

IDP

−72

A

Drain power dissipation (Tc

= 25°C)

PD

125

W

Single pulse avalanche energy

(Note 2)

EAS

937

mJ

Avalanche current

IAR

−18

A

Repetitive avalanche energy (Note 3)

EAR

12.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

1.0

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = −50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 Ω, IAR = −18 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-97

TOSHIBA

2-9F1B

Weight: 0.74 g (typ.)

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